ESD5325E will semiconductor ltd. 1 revision 1. 3 , 201 8 /1 0 / 0 8 ESD5325E 4 - line s , un i - d irectional, l ow c apacitance trans ient voltage suppressors descriptions the ESD5325E is a low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over - stress caused by esd (e lectro s tatic d ischarge ) . the ESD5325E incorporates four pairs of low capacitance steering diodes plus a tvs diode. the ESD5325E m ay be used to provide esd protection up to 30 k v (contact discharge ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 6a ( 8/20 s ) according to iec61000 - 4 - 5. the ESD5325E is available in sot 23 - 6l package. standard products are pb - free and h alogen - free. features ? reverse s tand - off voltage: 6 v m ax . (vdd to gnd) ? transient protection for each line according to iec61000 - 4 - 2 (esd) : 30 k v ( contact discharge ) iec61000 - 4 - 5 (surge): 6a (8/20 s) ? l ow capacitance: c i/o - gnd = 1.0 pf typ. ? ultra - low leak age current: i r <1 na typ. ? l ow clamping voltage : v cl i/o - gnd = 1 2 .5 v @ i pp = 16a (tlp) ? solid - state silico n technology applications ? usb 2.0 ? video graphics cards ? dvi ? ieee 1394 ? monitors and flat panel displays ? 10/100 ethernet ? notebooks h ttp // : www. sh - will semi.com sot 23 - 6l circuit d iagram 5 3 2 5 = device code t a =special code y w = date code marking & pin configuration (top view) order i nformation device package shipping ESD5325E - 6 /tr sot 23 - 6l 3 000/tape&reel 6 4 5 3 1 2 i / o i / o v d d i / o i / o g n d 5 3 2 5 t a y w 3 1 6 4 5 2
ESD5325E will semiconductor ltd. 2 revision 1. 3 , 201 8 /1 0 / 0 8 a bsolute m aximum r ating s electrical characteristics ( t a = 25 o c , unless otherw ise noted ) definitions of electrical characteristics parameter symbol rating unit peak pulse power ( t p = 8/20 s) p pk 70 w peak pulse current (t p = 8/20 s) i pp 6 a operating supply voltage (v dd to gnd) v dc 6 v esd according to iec61000 - 4 - 2 air discharge (i/o pins) v esd 30 k v esd a ccording to iec61000 - 4 - 2 contact discharge (i/o pins) 30 j unction temperature t j 1 25 o c operation temperature t op - 40 to 85 o c storage temperature t stg - 55 to 150 o c lead temperature t l 260 o c i v v f v r w m v b r v f c i p p i f i r i b r v c l i p p v f f o r w a r d v o l t a g e i f f o r w a r d c u r r e n t v f c f o r w a r d c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t v r w m r e v e r s e s t a n d - o f f v o l t a g e i r r e v e r s e l e a k a g e c u r r e n t v b r r e v e r s e b r e a k d o w n v o l t a g e v c l c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t
ESD5325E will semiconductor ltd. 3 revision 1. 3 , 201 8 /1 0 / 0 8 electrical characteristics ( t a = 25 o c , unless otherwise noted ) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact discharge mode, according to iec61000 - 4 - 2. 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol condition min. typ. max. unit i/o pin s reverse stand - off voltage v rwm 5 .0 v reverse leakage cur rent i r v rwm = 5v <1 100 n a reverse breakdown voltage v br i br = 1ma 7.0 8. 0 9. 0 v forward voltage v f i f = 10ma 0.6 0. 9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 12. 5 v dynamic resistance 1) r dyn t p = 100ns 0. 2 4 clamping voltage 2 ) v cl v esd = 8kv 12. 5 v clamping voltage 3 ) v cl i pp = 1a, t p = 8/20s 8.5 v i pp = 6a , t p = 8/20s 11.5 v junction capacitance c i/o - gnd v r = 0v, f = 1mhz, any i/o to gnd 1.0 1. 6 pf c i/o C i/o v r = 0v, f = 1mhz, any i/o to i/o 0.50 0.80 pf vdd pin reverse stand - off voltage v rwm 6 v reverse leakage current i r v rwm = 6 v 1 a reverse breakdown voltage v br i br = 1ma 7.0 8. 0 9. 0 v forward voltage v f i f = 1 0ma 0.6 0. 9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 12.0 v dy namic resistance 1) r dyn t p = 100ns 0. 2 1 clamping voltage 2 ) v cl v esd = 8kv 12.0 v clamping voltage 3 ) v cl i pp = 1a, t p = 8/20s 8.5 v i pp = 6a , t p = 8/20s 11.0 v
ESD5325E will semiconductor ltd. 4 revision 1. 3 , 201 8 /1 0 / 0 8 typical characteristics ( t a = 25 o c , unless otherwise noted ) 8/ 20 s w aveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse p ower vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. rever se voltage power derating vs. ambient t emperature 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 1 2 3 4 5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 i/o to i/o i/o to gnd f = 1mhz junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 1 2 3 4 5 6 7 7 8 9 10 11 12 i/o to gnd vdd to gnd pulse waveform: t p = 8/20 ? s v cl - clamping voltage (v) i pp - peak pulse current (a) 0 0 100 20 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t
ESD5325E will semiconductor ltd. 5 revision 1. 3 , 201 8 /1 0 / 0 8 typical characteristics ( t a = 25 o c , unless otherwise noted esd clamping - i/o to gnd ( +8kv contact discharge per iec61000 - 4 - 2) esd clamping - vdd to gnd (+8k v contact discharge per iec61000 - 4 - 2) tlp measurement - i/o to gnd esd clamping - i/o to gnd ( - 8kv contact discharge per iec61000 - 4 - 2) esd clamping - vdd to gnd ( - 8kv contact discharge per iec61000 - 4 - 2 ) tlp measurement - vdd to gnd 0 2 4 6 8 10 12 14 16 -2 0 2 4 6 8 10 12 14 16 18 20 22 i/o to gnd z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v) 0 2 4 6 8 10 12 14 16 -2 0 2 4 6 8 10 12 14 16 18 20 22 vdd to gnd z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
ESD5325E will semiconductor ltd. 6 revision 1.3, 2018/10/08 package outline dimensions sot-23-6l ? l2 l c e1 e d b l1 e1 e a1 a2 a side view side view top view recommended land pattern (unit: mm) symbol dimensions in millimeters min. typ. max. a 1.05 - 1.45 a1 0 - 0.15 a2 0.90 1.10 1.30 b 0.30 0.40 0.50 c 0.10 - 0.21 d 2.72 2.92 3.12 e 2.60 2.80 3.00 e1 1.40 1.60 1.80 e 0.85 0.95 1.05 e1 1.80 1.90 2.00 l 0.30 - 0.60 l1 0.59ref l2 0.25ref 0 - 8 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. 0.95 2.50 1.40 1.10 3.60 0.60
ESD5325E will semiconductor ltd. 7 revision 1.3, 2018/10/08 tape and reel information reel dimensions tape dimensions quadrant assignments for pin1 orientation in tape rd reel dimension ? 7inch ? 13inch w overall width of the carrier tape ? 8mm ? 12mm ? 16mm p1 pitch between successive cavity centers ? 2mm ? 4mm ? 8mm pin1 pin1 quadrant ? q1 ? q2 ? q3 ? q4 user direction of feed rd w p1 q1 q2 q3 q4 q1 q2 q3 q4
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